Digital battery

4. Filing Rapid Thermal Chemical Vapor (RTCVD)

RTCVD (Rapid Thermal Chemical Vapor Deposition) is the atmospheric pressure CVD (APCVD) has, based on induction heating, optical or radio frequency heating of the substrate and material support substrate so that the temperature the plant quickly reach the reaction temperature. Laboratories RTCVD graphite boat by radio frequency (RF) heating. Aspire 3000 battery LCBTP03003 RTCVD inner wall of the reaction temperature is lower, it does not react to the energy deposition occurs, so RTCVD are cold reactor wall. With the high deposition temperature polysilicon thin film of other commonly used methods: such as low pressure CVD (LPCVD) and liquid phase epitaxy (LPE) over, TRCVD The main advantage is the relatively simple devices, the deposition rate of high-speed heating and cooling (and hence less energy consumption) Simple answer, there are a variety of combinations to choose gas source. Some method of deposition on the growth rate anisotropy is strong (as EPA), this effect is much lower in the CVD process, which is heterogeneous in the polycrystalline and epitaxial thin film on a substrate is very important.

 

CVD deposition of a thin film of crystalline silicon crystal growth from the vapor phase of the complex physicochemical processes. Growth process can be divided into the following steps:

 

1) The transport of reaction gases in the drop zone and spreads to the substrate surface; PB991A PB992A PB994A

 

2) The reaction of molecules adsorbed on the surface of the substrate;

 

3) The reactive chemical reactions between molecules. Generated silicon atoms on the surface migration, aggregation, deposition;

 

4) The adsorption reaction by-products and left the drop zone.

 

The above steps took place one after another, the total deposition rate is determined by the slowest step in the decision, then the rate of deposition of layers mainly by the decision, the above measures 1 3. Overall, the temperature is low, the reaction of the chemical reaction between molecules determine the rate of growth of thin films (a situation that control the reaction rate), the temperature is high, the deposit rate will be more subject to control chemical reaction rate. At that time, to reach the reaction surface of the substrate will determine the number of molecules the size of the deposition rate (a situation that the transfer of control of mass). PP2182D PP2182L HSTNN-LB31

 

Secondly, the solid phase crystallization of amorphous silicon thin film method (SPC)

 

Solid-phase crystallization technique (CPS) is to the solid state in the thin amorphous silicon atoms in silicon layers are activated, restructuring, so that thin layers of amorphous silicon thin polysilicon crystallization technology Film. It is characterized by the occurrence of crystallisation of amorphous solids below their melting temperature after the temperature of crystallization. Low-cost poly-silicon thin-film solar cell, tends to be used as a substrate of glass cheap, silane gas as raw materials, the growth method of PECVD a-Si: H film, then heat-treated in a polycrystalline silicon thin film method. This technique has the advantage of large area thin films can be prepared, may be far from in-situ doped, low cost, a simple, easy to form a production line. Conventional furnace annealing at high temperature, rapid thermal annealing, the metal-induced crystallization, the crystallization induced by microwave part of the scope of the solid phase crystallization. Inspiron 1300 battery Inspiron 1318 battery

 

1. Conventional high-temperature furnace annealing

 

The method is of high purity nitrogen in a vacuum, or under the protection of the thin layer of amorphous silicon in the annealing furnace into the amorphous polysilicon. It is the use of the recrystallization of thin amorphous silicon to polycrystalline silicon thin films prepared by one of the most direct and simplest method, but also the first country people to adopt a crystallization technology.

 

In addition to the grain size of a thin film of polycrystalline silicon by effects of temperature, the condition of the initial structure of amorphous silicon film is also closely linked. Preparation of thin films of amorphous silicon in many ways, such as magnetron sputtering, the CVD method. Under normal circumstances, the use of the CVD method and prepared a-Si: H thin films after solid-phase crystallization, the grain can be better quality and larger size of polycrystalline silicon thin film. Because the method of depositing thin films of amorphous silicon, which contains large quantities of hydrogen. In fact, the deposition conditions on the preparation of a-Si: H films in the H content and its relationship with the combination of Si means the monitoring of solid phase crystallization process of thin layers of polysilicon and nature material plays a crucial impact. Sony VGP-BPS8 Sony VGP-BPS8A  a-Si: H films deposited at low temperature, solid phase materials in thin layers of polycrystalline silicon crystals obtained after the grain will be. Because the low temperature deposition of amorphous silicon materials has led to a higher state of disorder, making the nucleation method of solid phase crystallization (SPC) of thin films of polysilicon prepared by low density and therefore greater grain size.

 

For the CVD method is used, compared to direct deposit obtained materials in thin layers of polysilicon columns, using solid phase crystallized thin film polycrystalline silicon material obtained has a size larger grains, leading to its high carrier mobility rate. At the same time, it also found that the deposition of a-Si: H thin films after crystallization in solid phase, its increases in grain size with film thickness. Typically, for about the temperature to 400 ℃ under the conditions of depositing a-Si: H thin-film solid-phase crystallization process is the a-Si: H thin-film at about 600 ℃ under the conditions of heat treatment of approximately 15 hours. Through such a process may be CVD a-Si: H thin-film phase completely transformed into polycrystalline silicon. In addition, the study found that the use of PECVD deposition of thin films of amorphous silicon, low substrate temperature, deposition rate of the highest degree of disorder in the films of amorphous silicon will be higher using the crystallization polycrystalline silicon thin film amorphous silicon obtained grain size of the film will be larger; PA-10 PA-12 PA-16 a-Si film thicker polysilicon films crystallized after the grain size while the largest, but the time required for complete crystallization more long. In addition, other measures to facilitate access to large grain polysilicon thin-film quality, such as VCD thin film polysilicon increased processing ion implantation, using the method of strain polycrystalline silicon thin film was produced in the formation of some structural disorder of amorphous regions, reducing the nucleation center of origin, after annealing for more polysilicon thin photographic materials, and also can then take called “part of the doping method” to achieve the increase in grain size, two layers of film deposited on the substrate and the lower doped with phosphorus, as a nucleation layer, the upper part is Doping not, as a layer of crystal growth, after annealing can also obtain a larger grain, and found that the higher the degree of disorder of the undoped layer, the grain will be larger.

 

People have always thought that this tradition of classic high-temperature furnace annealing is a problem that is limited only by the glass substrates at a lower temperature (600 ℃ or so) annealing, but at a lower annealing temperature, the annealing time up to 10 hours long. However, with the technology of preparation of glass is currently developing and improving a number of glass can withstand temperatures get higher and higher, such as Corning 1737, the softening point temperatures as high as 975 ℃. With the glass as9T215 P/N 310-4804 A1021

 

The method of crystallization of simple equipment, easy operation, process maturity, and easy to control the crystallization conditions, and may be a large area, processing large volumes, is used in the preparation of polycrystalline silicon thin polycrystalline silicon thin film solar cell materials, there is a good perspective of industrial applications.

 

2. Metal induced crystallization (MIC)

 

In the amorphous silicon thin film coating the top layer of metal film or metal film coated on the substrate plating layer of amorphous silicon film so that the amorphous silicon with metal contacts, which can significantly reduce temperature crystallization of amorphous silicon (300 ℃, the crystallization can take place), shorten the time crystallization, and so-called metal-induced crystallization in solid phase. Metal induced solid phase crystallized polysilicon films Prepared crystallization time, micro-structure and grain size with deposition PECVD a-Si: H thin film deposition temperature and substrate surface is completely foreign to the state. Therefore, the metal induced solid phase crystallization of amorphous silicon thin-film original condition asking a lot, you can significantly reduce the scope of conditions of thin film deposition process. However, they are heavily dependent on the choice of metal type and annealing temperature. Can be used to trigger a lot of metal, such as the A1, Au, Ni, Pt, Ni, Cr, Pd and so on, metals, induced effects are slightly different. Metal-induced crystallization phenomenon since the 20th century was discovered 70 years, there have been many theories to interpret, some are more successful, they can explain many phenomena observed experimentally. M7332 402018-001 371790-001 According to the theories related to the process of crystallization can be described as follows: when the temperature rises and supported, metal and silicon inter-diffusion and then react to form the metal-silicon, generating a mixture of a silicon. For silicide metal, this mixture is a silicide, for a total of dissolved metals, such a mixture is a total melt metal and silicon. Under certain temperature, the metal-Si bond formation and rupture processes, but because of the free energy of crystalline silicon in a low, metal-Si bond breakage following the liberation of atoms silicon tend to neighboring silicon atoms to form a stable crystalline keys If participation in this process of metal-sufficient if it would release a sufficient number of atoms of silicon to form silicon micro -grains. Silicon grains came after the formation of crystalline silicon / metal mixture of silicon / amorphous silicon structure system. Then the formation of silicon-metal bond and breaking the reaction process is still ongoing, but in the crystalline silicon / metal interface of a mixture of silicon bonds have dominated the process of fracture, while in the metal a mixture of silicon / amorphous silicon in the formation of the binding interface dominated. Producing this difference is due to the free energy remains with the amorphous silicon is higher than the crystalline silicon. The whole system (crystalline silicon or mixture of metal structure Si Si /) in the continuous process of thermal motion tends to the free energy is always decreasing. In addition to crystalline silicon interface generated by the excess metal atom must pass through the metal to achieve a mixture of side silicon amorphous silicon to make this response to be effective, a mixture of metal a silicon crystal thickness will be restricted when speed. PPP012L F1781A PA1650 In addition, if the metal mixture volume of silicon is too small, which is involved in metal-Si bond as reflected by the number is too small, then the interface per unit time per unit area to produce a quantity limited fracture effectively, thus limiting the rate of crystallization. This process makes the silicon grains grow older, while promoting the metal-silicon mixture of forward movement, the last metal layer and the layer switching layer of amorphous silicon occurs, the amorphous silicon polysilicon. Briefly, by co-melting metal or metal silicide metal-induced crystallization to participate, they are based on the same mechanism, namely, metal-Si bond breaking and reorganization of the audit process heat to promote a regional reorganization of the network, and because of its intrinsic crystalline silicon free energy lower than the amorphous.

 

In recent years, to prepare for the polycrystalline silicon thin-film solar cells, polycrystalline silicon thin film transistors of polycrystalline silicon materials, it is the crystallization technology, much research. As the aluminum content-rich, low price, so a number of aluminum-induced crystallization unit Beishou search of all ages. Many studies have shown that in aluminum-induced crystallization process that affect the quality of polycrystalline silicon thin film parameters are numerous, especially in annealing time, annealing temperature, aluminum, and the ratio thickness of amorphous silicon film, the grain size of aluminum, Al / a-Si interface conditions. The higher the annealing temperature, grain size, the largest, but the rate of crystallization is slower; thick amorphous silicon film is constant, with increases of films of aluminum thickness, the crystallinity of thin films polysilicon has increased the size of the largest grain. In addition, increasing the grain size of polycrystalline aluminum, or aluminum and A-Film increase if a thin layer between Al203, PCGA-AC16V6 PCGAAC19V3 VGP-AC16V7 also cause the increase of silicon grains with a reduced rate of crystallization.

Some time ago rumors were that Windows 7 may damage the laptop battery does not have friends around a similar phenomenon, but the end is the Windows 7 ruined the battery or the battery itself is really bad, this issue has been controversial, in fact I believe that the system can ruin the battery is still weak, so the system is actually capable of such things, chances are from 2000, XP era appeared, and why it waited until now. 346970-001 367759-001 F2024A

 

Later, on the Internet that Microsoft engineers, a blog, which explains in detail this problem happens I also subject to Microsoft entrusted with the translation of this article was finished, he pushed for your information, look known as the informed observer, see the letter chi is literally worth a good mention, briefly, the user has an explanation.

 

My English is limited, we can see if the translation is bad, as does not affect the original intent, or laugh, if not tell me is secretly also doubtful.

 

The author is Steven Sinofsky, the Father said was responsible for most of the first Windows product years old fiercely.

 

Last week we saw some in the blogosphere about Windows 7 and battery active subjects, including “Please consider replacing the battery in the new Windows 7 news. As this is a topic on the Windows 7 project, we’ll use this blog to provide people with updated information. As we have said on many occasions, we are always committed to improving the quality of Windows 7 and take seriously any reports we receive these reports will identify potential problems and these F2024B F4486B F4809A problems may lead the failure of systems. In previous posts we talked when we receive the report of the bug, especially when we begin to see some reports suggest that the same question, we’ll take what follows. During the past week, we worked hard through these steps and to view more content, we would like to learn more about this problem in Windows 7 Is there where we must solve. At this stage we have no reason to believe that in this case there is no question about Windows 7’s.

 

Users posted in the blog and forums to claim that Windows 7 warning that “Please remember to replace batteries, while in the upgrade to Windows 7 before this problem does not occur, this situation has caused Last week the attention of a number of newspaper articles. These articles described in the posts in support of the Forum, said Windows 7 is not only to warn people with defective batteries to the user - that’s what we work for the design of Windows 7 — but has also hinted that Windows 7 In response to this State has made the wrong report, even worse, causing damage to these cells. For everyone in this circle into a good understand - Windows 7 on F4812A HSTNN-lB31 PB991A battery warning issued by the law, because it is really bad, Windows 7 is not made an error report on the state batteries, or by any path leading to cell damage. In each case, we were able to confirm these reports are in fact necessary to recommend replacing the battery.

 

To use all tools at our disposal, including the links in the Forum Report this item to the customer, customer service, communication, and our manufacturers of computers, of course, also included in Windows 7 telemetry, we have been tracking reports, and on this new feature to discuss, try to demonstrate that Windows 7 may lead to behavioral problems in the report of the open division. In the latter case we are trying to understand the scope of its application, and access to equipment to reproduce the behavior of error. To date, all these steps that we have a client in a battery of health problems described in the report and in any case, we investigated the Windows 7 is very accurate for the detection of a defective battery. Before I start talking about the state of this particular problem, we should first examine the details behind this new functionality. PB992A PB994A PP2182D

 

The battery life of the computer (you’re using the hour race), the most obvious component is one of the battery itself. The capacity of the battery in the computer itself, the degradation is used to load and the supply of electricity (like all rechargeable batteries do). The reason is that chemical changes in the farm complex includes irreversible changes, and increased internal resistance, and more depending on the design and manufacture of the battery. On the user’s computer in such degradation in terms of battery life will shorten battery life. Finally, the battery must be replaced, so the computer can be restored to the battery life acceptable. A quick check consumer laptop, the battery will usually guarantee of 12 months, what about the life of the battery, but also by the statistics that we can come to accept the apparent degradation of battery life time (which means you have started paying attention to the need for more frequent refills). Like ours, have used the same computer a laptop (or a cell phone, music player or other equipment necessary for rechargeable batteries) in 2023, and take frequent repetitive load, there is no doubt that we can “feel” to the battery life of mitigation, in the absence of any information provided to us under the assumption of reference that can be attributed to the alleviation of life PP2182L HSTNN-LB31 battery of any element.

 

Windows 7 uses a new feature of laptop battery, this function of the circuit and firmware can give Windows a comprehensive report on the battery level of health. It is the use of kilowatt-hours (Wh) in the calculation of the absolute power capacity. Windows 7 On this basis, make a simple calculation, the original design capacity of the battery, based on accurate data and to calculate the current capacity fade percentage. In Windows 7, we set the decay rate of 60% ceiling (which is the available capacity of the battery is only 40% of design capacity), and Windows 7 will help you interpret the report. At this stage, for example, a battery charging could be provided after 5 hours of electricity, but now, on average, only about 2 hours. Windows 7 in the stack in the notice is the icon of the battery meter and sends the notification message, “Please consider replacing the battery.” This notice is the new Windows 7 features, in Windows Vista and Windows XP does not exist.

 

The battery meter displays a notification indicating that the PA3383U-1BRS PA3395U-1BRS battery may be bad

 

Drums by the PC system firmware (or BIOS) on battery capacity and health reveal the degree of information. In the Firmware Interface (ACPI) on the detailed specifications, but the most local level, the platform hardware and firmware provides read only a few regions, these areas and describe the battery status. The firmware provides a battery of data, including manufacturer, serial number, design capability and capacity of the last full charge. The last two pieces of information - the design capability and capacity last full charge - what Windows 7 is used to determine how many cells were naturally attenuated. This information is read-only, and no way to make Windows 7 or any other operating system to prepare, implement or configure the information of battery status. In fact, all pairs of conduct discharge of the battery is completely controlled by the hardware in the hands of the battery. Windows reports that it can be read from the system firmware in the battery information. Some reports erroneously claimed, Windows has proposed to amend the information, it is absolutely impossible. A1021 M7332

 

As mentioned previously, the whole world that we have received the relevant report, we see only the new features of Windows 7 to use this report on the status of the battery, and we see that the battery described in the report ’s has not reached the specified threshold. Here, we examine the specific data to support this view. Some users of the previous system, all normal, in upgrading the computer system after seeing such a warning would be surprised, of course, it is very reasonable. Essentially, because the attenuation caused by the battery, but for users of this decline is unclear, difficult to detect until Windows 7 provides such information has changed. We recognize this feature in Windows 7 a “cause” changes in performance, but in fact do all the things Windows 7 reports only by those who have already taken place.

 

The following data points helps us understand that the report information. Keep in mind that we do telemetry are optional to join, anonymous, and follow the Privacy Policy.

 

We have already seen this report has not noticed the new hardware or recently purchased a computer to reproduce. Although we have seen reports that the new computer has received the notice but in all cases, we confirmed that these cells already in disrepair. 402018-001 371790-001 PPP012L

 

Our OEM partners should use their telemetry (call center, support forums, etc.) and we already know they did not see any circumstance beyond their expectations. It should be noted that manufacturers of computers for customers to solve the battery problem, have a clear vision of what both the general area or a particular model, a calendar and batteries at the end, what was expected.

 

Throughout the online support of importance and self-help forums, and worked at the appropriate time to follow all the errors on this notification has been reported. Through this work, we identified a new battery or the computer does not reproduce the problem described in the report and has learned that the battery capacity is indeed attenuated.

Telemetry customers of RTM, only a small percentage of users receiving a “Please consider replacing the battery,” the notice, as expected, we find that these systems are used for more than 1 , 5 years. Compared to the pre-release version, we see relatively less notice, reduce the average age in the system. F1781A PA1650 PCGA-AC16V6

 

Microsoft has received 12 protests customer service, in addition to various other bodies of eight additional events. So far (a total of 20 events) these events do not show an addition to the battery for any reason other than degradation.

Microsoft TechNet moderator of the community was used to help additional customers contact regarding this notification, we report that the appointment of staff to service additional customer to prepare for this question. In any case, we have received about 30 contacts, which found no opinion on this new argument or status.

 

In the Windows 7 pre-release version of the test, the notice said, we can see from our customers almost exactly the same experience. In fact, look at the tests pre-publication sale of equipment, we can see that the system has received the notification to maintain a steady increase in very small numbers. From this point of view realistic, many customers have purchased a new computer, Windows 7 and recently purchased a computer using Windows Vista Upgrade Available. PCGAAC19V3 VGP-AC16V7

During the inspection, which shows that reporting, the reports of telemetry equipment, we see no other reliable data show that any other system abnormalities.

 

Although information on the status of the battery available to the operating system via ACPI is read-only access, we conducted a code review and thorough checks to determine that there is no possibility change the status code of the battery information.

 

These data will confirm our point of view, we see the emergence over time the normal degradation of the battery. In the new Windows 7 features provided in the transparency of the technologies used to produce an opinion, which in the past is not visible to customers, but after upgrading to achieve quickly. This is what we have seen these posts in an emergency root cause, but the reality of the situation can change the battery. We have not confirmed the purchase of new machines and the status of the battery. PA3468U-1ACA PA3097U-1ACA

 

As we have said about the quality of all reports of Windows 7, we will continue to treat with care, when the ratio of potential problems, we’ll use all tools at our disposal to clear it from the bottom, in need of code changes, we will be improved and to customers. We are sure that because we can, we are concerned by this report, and basically solve the problem, but we will continue to monitor the relevant circumstances. In particular, we continue to work with our OEM partners, communication and contact, they will be monitored closely to their customers and the computer.

 

Finally, if you believe you received the wrong message, and your battery is new, or you believe that your battery is in the best condition, please inform us of this situation or the original manufacturer of your ‘computer. PA-16 9T215